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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11063020 B1

PDFFull Text
Date of Patent:
Jul. 13, 2021

Filed:

Jul. 24, 2019

Semiconductor device, manufacturing method for semiconductor device, and electronic device

Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Satoru Wakiyama, Kanagawa, JP;

Masaki Okamoto, Kumamoto, JP;

Yutaka Ooka, Kanagawa, JP;

Reijiroh Shohji, Tokyo, JP;

Yoshifumi Zaizen, Kanagawa, JP;

Kazunori Nagahata, Kanagawa, JP;

Masaki Haneda, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:

Sheridan Ross P.C.

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 21/768 (2006.01); H01L 27/146 (2006.01); H01L 23/48 (2006.01); H01L 21/306 (2006.01); H01L 25/00 (2006.01); H01L 21/311 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/76805 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/50 (2013.01); H01L 27/1469 (2013.01); H01L 27/14632 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14687 (2013.01); H01L 2224/32145 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06548 (2013.01); H01L 2924/0002 (2013.01);
Abstract

There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

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