The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Mar. 17, 2020
Applicant:

Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, JP;

Inventors:

Hiroshi Matsushita, Ehime, JP;

Ryota Ohnishi, Ehime, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/20 (2006.01); H01J 37/09 (2006.01); G21K 1/10 (2006.01); H01J 37/147 (2006.01); H01J 37/304 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); G21K 1/10 (2013.01); H01J 37/09 (2013.01); H01J 37/1472 (2013.01); H01J 37/20 (2013.01); H01J 37/30 (2013.01); H01J 37/304 (2013.01); H01J 2237/0473 (2013.01);
Abstract

An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.


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