The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Dec. 05, 2018
Panasonic Corporation, Osaka, JP;
Reiji Mochida, Osaka, JP;
Kazuyuki Kouno, Osaka, JP;
Takashi Ono, Osaka, JP;
Masayoshi Nakayama, Kyoto, JP;
Yuriko Hayata, Osaka, JP;
PANASONIC CORPORATION, Osaka, JP;
Abstract
A variable resistance non-volatile memory device includes a memory cell array including memory cells, a write circuit, and a control circuit. Each memory cell includes a memory element that is a non-volatile and variable-resistance memory element, and a cell transistor. The write circuit includes a source line driver circuit connected to the cell transistor and a bit line driver circuit connected to the memory element. When performing a write operation of changing the memory element to a low resistance state, the control circuit performs control for allowing current having a first current value to flow through the memory element, and subsequently performs control for allowing current having a second current value to flow through the memory element. The second current value is greater than the largest value of overshoot current flowing through the memory element after the start of the changing of the memory element to the low resistance state.