The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Aug. 14, 2020
Applicant:
Socionext Inc., Kanagawa, JP;
Inventor:
Shinichi Moriwaki, Yokohama, JP;
Assignee:
SOCIONEXT INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/412 (2006.01); G11C 11/417 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); G11C 11/417 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01);
Abstract
In an SRAM cell using vertical nanowire (VNW) FETs, transistors (PD, PD) constituting a drive transistor are placed on both sides of a transistor (PU) in an X direction, and transistors (PD, PD) constituting a drive transistor are placed on both sides of a transistor (PU) in the X direction. An access transistor (PG) is placed on one-hand side in the X direction of the transistor (PU), and an access transistor (PG) is placed on the other-hand side in the X direction of the transistor (PU).
Moriwaki, Shinichi. (2021). Semiconductor integrated circuit device (U.S. Patent No. 11062765). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11062765
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile