The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Aug. 01, 2018
Applicant:

Schott Glass Technologies (Suzhou) Co. Ltd., Suzhou, CN;

Inventors:

Pengxiang Qian, Shanghai, CN;

Yunfei Hou, Hubei, CN;

Junming Xue, Shanghai, CN;

Rainer Liebald, Nauheim, DE;

Hiroshi Kuroki, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 3/091 (2006.01); C03C 4/00 (2006.01); C03C 27/00 (2006.01);
U.S. Cl.
CPC ...
C03C 3/091 (2013.01); C03C 4/00 (2013.01); C03C 4/0085 (2013.01); C03C 27/00 (2013.01);
Abstract

A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO: 60-85, AlO: 1-17, BO: 8-20, NaO: 0-5, KO: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than −0.2 and a ratio BO/AlOis equal to or larger than 0.5. The NBO is defined as NBO=2×O/(Si+Al+B)−4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.


Find Patent Forward Citations

Loading…