The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Apr. 03, 2020
Psemi Corporation, San Diego, CA (US);
Buddhika Abesingha, Escondido, CA (US);
PSEMI CORPORATION, San Diego, CA (US);
Abstract
Systems, methods, and devices for accurate sensing of gate voltages of high-voltage devices are presented. A gate sense circuit can generate accurate transitions of the gate voltages via a differential input provided by a gate node voltage and a source node voltage of the high-voltage devices. The differential input is fed to two separate processing paths, one path for accurate detection of a rising edge of the gate voltage with a reduced propagation delay, and the other path for accurate detection of a falling edge of the gate voltage with a reduced propagation delay. A switch selects an output of the two paths that accurately detects a next edge to be detected. An Output pulse signal defined by the detected rising and falling edges is generated based on the output of the switch.