The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Sep. 18, 2018
Applicant:

Radiawave Technologies Co., Ltd., Shenzhen, CN;

Inventors:

Yigao Shao, Shenzhen, CN;

Yulin Tan, Shenzhen, CN;

Jon Sweat Duster, Beaverton, OR (US);

Haigang Feng, Shenzhen, CN;

Ning Zhang, Shenzhen, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/191 (2006.01); H03F 3/21 (2006.01); H03F 1/48 (2006.01); H03F 1/56 (2006.01); H03F 3/213 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03F 3/211 (2013.01); H03F 1/483 (2013.01); H03F 1/565 (2013.01); H03F 3/213 (2013.01); H03F 3/4521 (2013.01); H03F 2200/222 (2013.01); H03F 2200/318 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21103 (2013.01); H03F 2203/21142 (2013.01); H03F 2203/45051 (2013.01); H03F 2203/45374 (2013.01);
Abstract

The present disclosure provides a power amplifier and an electrical device. The two-stage power amplifier architecture is tuned staggered before power combining. A previous stage matching network and its input matching are split into a cascaded staggered tuning, such that the center frequency is at frequency pointless than the design frequency point and frequency pointgreater than design frequency point, and then the power combining stage is tuned at the design frequency point. At advanced process nodes (such as 65 nm or below), compared with the known architecture, in-band signal quality and out-of-band filtering effect of the power amplifier chip integrating this architecture will be better when using the same number of transformers (same area), the reliability will be better. Due to its good flatness within the band, this architecture is especially suitable for carrier aggregation communication occasions.


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