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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11056648 B1

PDFFull Text
Date of Patent:
Jul. 06, 2021

Filed:

May. 06, 2020

Semiconductor device including variable resistance element

Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Jae-Hyun Han, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:

Tri M Hoang

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01); G06N 3/063 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1206 (2013.01); G06N 3/063 (2013.01); G11C 13/004 (2013.01); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 45/085 (2013.01); H01L 45/1266 (2013.01); G11C 2013/005 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0071 (2013.01); G11C 2213/72 (2013.01);
Abstract

A semiconductor device including a variable resistance device is provided. A variable resistance element according to one embodiment of the present disclosure includes: an ion-receiving layer having a top, a bottom and a sidewall connecting the top to the bottom; an ion supply layer having an inner sidewall connected to at least a portion of the sidewall of the ion-receiving layer; a gate pattern connected to an outer sidewall of the ion supply layer; and a source pattern connected to one of the top or bottom of the ion-receiving layer, and a drain pattern connected to the other one of the top or bottom of the ion-receiving layer, wherein a resistance of the ion-receiving layer varies depending on an amount of ions supplied from the ion supply layer based on a voltage applied to the gate pattern.

Find Patent Forward Citations

Han, Jae-Hyun. (2021). Semiconductor device including variable resistance element (U.S. Patent No. 11056648). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11056648

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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