The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Dec. 16, 2019
Microsoft Technology Licensing, Llc, Redmond, WA (US);
Roman Lutchyn, Santa Barbara, CA (US);
Andrey Antipov, Santa Barbara, CA (US);
Microsoft Technology Licensing, LLC, Redmond, WA (US);
Abstract
Josephson magnetic memory cells with a semiconductor-based magnetic spin valve are described. An example memory cell includes a first superconducting electrode, a second superconducting electrode, and a semiconductor-based magnetic spin valve arranged between the two superconducting electrodes. The semiconductor-based magnetic spin valve includes a semiconductor layer and a first ferromagnetic insulator arranged near the semiconductor layer, arranged on a first side of the semiconductor layer, configured to provide a fixed magnetization oriented in a first direction. The semiconductor-based magnetic spin valve further includes a second ferromagnetic insulator, arranged on a second side, opposite to the first side, of the semiconductor layer, configured to provide a free magnetization oriented in the first direction or a second direction, opposite to the first direction, in order to control a parameter associated with a flow of current from the first superconducting electrode to the second superconducting electrode through the semiconductor layer.