The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Apr. 22, 2019
Applicant:
Hamza Yilmaz, Gilroy, CA (US);
Inventor:
Hamza Yilmaz, Gilroy, CA (US);
Assignee:
IPOWER SEMICONDUCTOR, Gilroy, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 21/265 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02634 (2013.01); H01L 21/26513 (2013.01); H01L 29/0634 (2013.01); H01L 29/0657 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/4236 (2013.01); H01L 29/66712 (2013.01); H01L 29/7813 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract
The present invention provides semiconductor devices with super junction drift regions that are capable of blocking voltage. A super junction drift region is an epitaxial semiconductor layer located between a top electrode and a bottom electrode of the semiconductor device. The super junction drift region includes a plurality of pillars having P type conductivity, formed in the super junction drift region, which are surrounded by an N type material of the super junction drift region.