The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Aug. 01, 2018
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;
Hui Xia, Guangdong, CN;
Zhiwei Tan, Guangdong, CN;
Abstract
A thin-film transistor and a manufacturing method for the same are disclosed. The method includes steps of: depositing a first metal layer on a substrate; depositing a semiconductor material layer on the first metal layer, and using a first photolithography process to perform a patterning process to the semiconductor material layer in order to form a semiconductor active layer depositing a second metal layer on the first metal layer and the semiconductor active layer, and using a second photolithography process to perform a patterning process to the first metal layer and the second metal layer in order to obtain a first electrode, a second electrode, and a third electrode, wherein the first electrode and the second electrode are disposed at an interval, the first electrode is disposed on the substrate, the second electrode is disposed between the substrate and the semiconductor active layer, and the third electrode is disposed on the semiconductor active layer, projections of the second electrode and the third electrode on a horizontal plane are overlapped; the first electrode is formed by the first metal layer and the second metal layer. The fabrication of the first electrode, the second electrode, the third electrode, and the active layer can be completed by only two photolithography processes, which reduce process steps and reduce cost.