The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Feb. 15, 2019
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 27/11573 (2017.01); H01L 21/265 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/26506 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/1079 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a semiconductor layer having a first plane and a second plane opposite to the first plane; a gate electrode; a gate insulating layer provided between the first plane and the gate electrode; and a pair of first p-type impurity regions provided in the semiconductor layer on both sides of the gate electrode, containing boron, carbon, and germanium, having a bond structure of boron and carbon, having a first boron concentration and a first depth in a direction from the first plane toward the second plane, and having a distance between the first p-type impurity regions being a first distance.