The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Aug. 01, 2019
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Soyeon Je, Paju-si, KR;

KiTae Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/786 (2006.01); H01L 31/0232 (2014.01); H01L 51/40 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/1218 (2013.01); H01L 27/1237 (2013.01); H01L 27/1255 (2013.01); H01L 27/3258 (2013.01); H01L 27/3276 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 27/3262 (2013.01); H01L 27/3265 (2013.01);
Abstract

A display device includes a substrate; a buffer layer disposed on the substrate; a first thin-film transistor comprising a first active layer made of a low-temperature poly-silicon (LTPS), a first gate electrode overlapping with the first active layer with the first gate insulating layer and the second gate insulating layer therebetween, and a first source electrode and a first drain electrode electrically connected to the first active layer; and a second thin-film transistor comprising a second active layer made of an oxide semiconductor, a second gate electrode overlapping with the second active layer with the second gate insulating layer therebetween, and a second source electrode and a second drain electrode electrically connected to the second active layer. The first gate electrode of the first thin-film transistor and the second gate electrode of the second thin-film transistor may be disposed on the second gate insulating layer.


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