The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Oct. 07, 2019
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Assignee:
SK HYNIX INC., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/3205 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/102 (2006.01); H01L 27/105 (2006.01); H01L 29/40 (2006.01); H01L 21/822 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 21/28088 (2013.01); H01L 21/32051 (2013.01); H01L 21/32055 (2013.01); H01L 21/8221 (2013.01); H01L 27/1027 (2013.01); H01L 27/1052 (2013.01); H01L 29/401 (2013.01); H01L 29/66363 (2013.01);
Abstract
A semiconductor device having a three-dimensional structure is disclosed herein. The semiconductor device includes a substrate. a first electrode line that extends in a first direction perpendicular to the substrate, a device pattern that extends from the first electrode line in a second direction parallel to the substrate, and a second electrode line connected to the device pattern. The device pattern may comprise at least one semiconductor layer pattern, where the at least one semiconductor layer pattern comprises an n-type dopant or a p-type dopant.