The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Aug. 07, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Ryu Kamibaba, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes an IGBT region extending from a front surface to a rear surface of a semiconductor substrate including a first conductive type drift layer, and a diode region lying adjacent to the IGBT region. The IGBT region includes a second conductive type base layer on a side facing the front surface and a first trench portion penetrating the base layer. The first trench portion includes a first gate electrode, a second gate electrode provided directly below the first gate electrode, and an insulating film provided on a side surface of the first gate electrode, between the first gate electrode and the second gate electrode and in a position to contact the second gate electrode. The diode region includes a second conductive type anode layer and a second trench portion including a dummy gate electrode on the side facing the front surface.