The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Jul. 27, 2018
Applicant:

Siemens Aktiengesellschaft, Munich, DE;

Inventor:

Stefan Pfefferlein, Heroldsberg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H05K 5/06 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 21/56 (2013.01); H01L 23/31 (2013.01); H01L 23/5386 (2013.01); H05K 5/064 (2013.01);
Abstract

A power module includes a substrate having a first layer and a second layer which are connected to one another and arranged above one another. The first layer includes a first dielectric material having a metallization arranged on a side facing the second layer and the second layer includes a second dielectric material having a metallization arranged on a side facing away from the metallization of the first dielectric material. A power semiconductor having a first contact area and a second contact area opposite the first contact area is connected to the metallization of the first dielectric material via the first contact area and arranged in a first recess of the second layer. A metallic first encapsulation encapsulates the power semiconductor in a fluid-tight manner, with the second contact area of the power semiconductor being electrically conductively connected to the metallization of the second dielectric material via the first encapsulation.


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