The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Sep. 16, 2019
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Takehiko Kikuchi, Osaka, JP;

Morihiro Seki, Osaka, JP;

Nobuhiko Nishiyama, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01S 5/343 (2006.01); G02B 6/136 (2006.01); H01L 31/0232 (2014.01); H01L 21/205 (2006.01); H01S 5/227 (2006.01); H01S 5/223 (2006.01); H01S 5/12 (2021.01); H01S 5/323 (2006.01); H01S 5/042 (2006.01); H01L 33/58 (2010.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/205 (2013.01); G02B 6/12004 (2013.01); G02B 6/136 (2013.01); H01L 21/0262 (2013.01); H01L 21/02521 (2013.01); H01L 31/02327 (2013.01); H01L 33/58 (2013.01); H01S 5/0425 (2013.01); H01S 5/12 (2013.01); H01S 5/2238 (2013.01); H01S 5/2275 (2013.01); H01S 5/32391 (2013.01); H01S 5/343 (2013.01);
Abstract

A method of manufacturing an optical semiconductor element includes: stacking a plurality of compound semiconductor layers on a first substrate containing a compound semiconductor; dividing the first substrate into small pieces; forming terraces, grooves, walls, and a first mesa for a waveguide on a second substrate containing silicon; jointing at least one small piece to the second substrate after the forming; wet-etching the first substrate so as to expose the compound semiconductor layers after the jointing; and forming a second mesa opposite to the first mesa from the compound semiconductor layers; wherein the grooves are formed on both sides of the first mesa, the terraces are formed on both sides of the first mesa and the grooves, and the walls are arranged in an extending direction of each groove.


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