The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Dec. 03, 2018
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Frank Fournel, Villard-Bonnot, FR;

Frederic Mazen, Saint-Egreve, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/18 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/187 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 21/76254 (2013.01); H01L 21/2007 (2013.01);
Abstract

A process for attaching a first substrate to a second substrate by direct bonding includes the successive steps of: a) providing the first and second substrates, each comprising a first surface and an opposite second surface, b) bonding the first substrate to the second substrate by direct bonding between the first surfaces of the first and second substrates, step b) being carried out under a first gaseous atmosphere having a first relative humidity level denoted by φ, and c) applying a thermal annealing treatment to the bonded first and second substrates at a thermal annealing temperature of between 20° C. and 700° C., step c) being carried out under a second gaseous atmosphere having a second humidity level denoted by φ, satisfying φ≥φ.


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