The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Aug. 29, 2019
Applicant:
The Johns Hopkins University, Baltimore, MD (US);
Inventor:
Jarod C. Gagnon, Finksburg, MD (US);
Assignee:
The Johns Hopkins University, Baltimore, MD (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/40 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02538 (2013.01); C30B 25/02 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02387 (2013.01); H01L 21/02455 (2013.01); H01L 21/02488 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 29/04 (2013.01);
Abstract
A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers, a maximum width of 25 micrometers to 10 millimeters, and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material.
Gagnon, Jarod. (2021). Method for printing wide bandgap semiconductor materials (U.S. Patent No. 11056338). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11056338
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile