The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Aug. 07, 2020
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Katsuyoshi Harada, Toyama, JP;

Tatsuru Matsuoka, Toyama, JP;

Yoshitomo Hashimoto, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/345 (2013.01); C23C 16/45553 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01);
Abstract

There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiClas a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiClis not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).


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