The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Nov. 27, 2017
Applicant:
Mi2-factory Gmbh, Jena, DE;
Inventors:
Florian Krippendorf, Jena, DE;
Constantin Csato, Stammbach, DE;
Assignee:
MI2-FACTORY GMBH, Jena, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/05 (2006.01); C23C 14/18 (2006.01); C23C 14/48 (2006.01); H01J 37/147 (2006.01); H01J 37/20 (2006.01); H01J 37/317 (2006.01); H01L 21/04 (2006.01); H01L 29/32 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01J 37/05 (2013.01); C23C 14/18 (2013.01); C23C 14/48 (2013.01); H01J 37/1472 (2013.01); H01J 37/1477 (2013.01); H01J 37/20 (2013.01); H01J 37/3171 (2013.01); H01L 21/046 (2013.01); H01L 21/0415 (2013.01); H01L 29/32 (2013.01); H01J 2237/024 (2013.01); H01J 2237/0456 (2013.01); H01J 2237/0458 (2013.01); H01J 2237/0475 (2013.01); H01J 2237/057 (2013.01); H01J 2237/1518 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/31701 (2013.01); H01J 2237/31705 (2013.01); H01J 2237/31711 (2013.01); H01J 2237/31713 (2013.01); H01L 21/265 (2013.01);
Abstract
A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.