The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Jan. 08, 2020
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Aneesh Puthoor, Bangalore, IN;

Harvijay Singh, Bangalore, IN;

Narendhiran Chinnaanangur Ravimohan, Bangalore, IN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 29/00 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 29/42 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G11C 16/26 (2013.01); G11C 16/3445 (2013.01); G11C 29/42 (2013.01); G11C 29/702 (2013.01); G11C 29/783 (2013.01); G11C 29/88 (2013.01);
Abstract

Devices, methods, and systems for managing temperature dependent failures in a memory device. An erase failure of a memory block is detected, and marked as a grown bad block if the memory device temperature is below a threshold temperature. If the temperature exceeds the threshold temperature, it is determined whether memory cells of the block exceed a first threshold voltage. If the memory cells of the block exceed the first threshold voltage, the block is marked as a potential grown bad block. If the memory cells of the block are below the first threshold voltage, it is determined whether a number of the memory cells of the block exceed a second threshold voltage. If the memory cells of the block are below the second threshold, the block is programmed. If the memory cells of the block exceed the second threshold, the block is marked for error correction and programmed.


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