The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Dec. 12, 2019
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Jae Hyeon Shin, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 11/409 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4087 (2013.01); G11C 11/409 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01);
Abstract

A memory device having improved read reliability includes: first blocks coupled to a first global line group and second blocks coupled to a second global line group; a voltage generator configured to generate an operating voltage for an operation performed on the first blocks and the second blocks; a block decoder configured to generate a block select signal for selecting a memory block on which a main operation is to be performed from among the first blocks as a selected block; and a block voltage controller configured to control the block decoder and the voltage generator to: perform a channel initializing operation of discharging channel regions of the selected block and a shared block which is selected from among the second blocks according to the block select signal; and perform a word line floating operation on the selected block and the shared block after the channel initializing operation.


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