The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Dec. 04, 2019
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Ik Joon Son, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G06F 12/0882 (2016.01); G06F 12/02 (2006.01); G06F 11/30 (2006.01); G11C 11/4074 (2006.01); G11C 11/409 (2006.01); G06F 13/16 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0882 (2013.01); G06F 11/3037 (2013.01); G06F 12/0246 (2013.01); G06F 13/1668 (2013.01); G11C 11/409 (2013.01); G11C 11/4074 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/04 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G06F 2212/1016 (2013.01); G06F 2212/7203 (2013.01); G06F 2212/7209 (2013.01);
Abstract

A controller for controlling a non-volatile memory apparatus including page groups each including a plurality of pages is configured to select a target page group from the page groups, wherein the target page group includes at least one invalid page and at least one valid page, select, as a target threshold voltage distribution, a lower threshold voltage distribution of two adjacent threshold voltage distributions distinguished by an invalid read voltage, wherein the invalid read voltage is a read voltage for distinguishing between data stored in the invalid page, select, as a target memory cell, a memory cell located in the target threshold voltage distribution among a plurality of memory cells configuring the target page group, and control the non-volatile memory apparatus to perform an adjustment program operation for raising a threshold voltage of the target memory cell as much as a first voltage.


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