The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Feb. 24, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hee Sung Kim, Seoul, KR;

Hyun Wook Shin, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G06F 3/06 (2006.01); G06F 13/16 (2006.01); G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0647 (2013.01); G06F 3/0604 (2013.01); G06F 3/068 (2013.01); G06F 3/0659 (2013.01); G06F 13/1668 (2013.01); G11C 11/005 (2013.01); G11C 11/5671 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 2213/79 (2013.01);
Abstract

A storage device includes a first nonvolatile memory device, a second nonvolatile memory device, and a data line. The second nonvolatile memory device is of a different type from the first nonvolatile memory device. The data line is shared by the first nonvolatile memory device and the second nonvolatile memory device. First data is simultaneously provided to the first nonvolatile memory device and the second nonvolatile memory device through the data line, the first data is written to the second nonvolatile memory device, and the first data is reprogrammed into the first nonvolatile memory device by reading the first data from the second nonvolatile memory device and providing the read first data to the first nonvolatile memory device.


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