The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Jun. 06, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Woon-hyuk Choi, Yongin-si, KR;
No-young Chung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of manufacturing an extreme ultraviolet (EUV) mask, for use in an EUV exposure process, on a mask substrate includes constructing a first monitoring macro considering an effect caused by a slit used in the EUV exposure process, performing an optical proximity correction (OPC) using a plurality of second monitoring macros, wherein each of the plurality of second monitoring macros is substantially identical to the first monitoring macro, inputting mask tape-out (MTO) design data acquired through the OPC, preparing mask data including at least one of data format conversion, mask process correction (MPC), and job-deck for the MTO design data, and performing EUV exposure (writing) on the mask substrate based on the mask data.