The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Aug. 24, 2018
Applicants:

Photonics Electronics Technology Research Association, Tokyo, JP;

The University of Tokyo, Tokyo, JP;

Inventors:

Junichi Fujikata, Tokyo, JP;

Shigeki Takahashi, Tokyo, JP;

Mitsuru Takenaka, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01); G02F 1/015 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02F 1/015 (2013.01); G02B 2006/12142 (2013.01); G02F 1/0152 (2021.01); G02F 2201/063 (2013.01); G02F 2203/50 (2013.01);
Abstract

Provided is an optical modulator which is small in optical loss, is small in a size, and is low in required voltage and is operable to perform high-speed operation. The optical phase modulatorcomprises a rib-type waveguide structureincluding: a PN junctionwhich is formed of Si and is formed in a lateral direction on a substrate; and an SiGelayerwhich is constituted of at least one layer and is doped with an impurity to a p-type and is superposed on the PN junctionso as to be electrically connected to the PN junction. The rib-type waveguide structurehas a substantially uniform structure along a light propagation direction, and in a direction parallel with the substrate and perpendicular to the light propagation direction, a position of a junction interfaceof the PN junctionis offset from a center of the SiGelayer


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