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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11054312 B1

PDFFull Text
Date of Patent:
Jul. 06, 2021

Filed:

Jan. 29, 2019

Radiation-defect mitigation in inas/gasb strained-layer superlattice infrared detectors and related methods

Applicant:

University of Central Florida Research Foundation, Inc., Orlando, FL (US);

Inventors:

Leonid Chernyak, Orlando, FL (US);

Robert E. Peale, Winter Park, FL (US);

Christopher J. Fredricksen, Orlando, FL (US);

Jonathan Lee, Orlando, FL (US);

Assignee:

UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC., Orlando, FL (US);

Attorney:

Allen, Dyer, Doppelt + Gilchrist, PA

Primary Examiner:

Hoon K Song

Int. Cl.
CPC ...
G01J 5/06 (2006.01); H01L 31/02 (2006.01); H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/109 (2006.01); H01L 31/0304 (2006.01); G01J 5/24 (2006.01); G01J 5/20 (2006.01); G01J 5/00 (2006.01);
U.S. Cl.
CPC ...
G01J 5/06 (2013.01); G01J 5/24 (2013.01); H01L 27/1462 (2013.01); H01L 27/1465 (2013.01); H01L 27/1469 (2013.01); H01L 27/14694 (2013.01); H01L 31/02019 (2013.01); H01L 31/0304 (2013.01); H01L 31/035236 (2013.01); H01L 31/109 (2013.01); H01L 31/184 (2013.01); H01L 31/186 (2013.01); G01J 2005/0077 (2013.01); G01J 2005/067 (2013.01); G01J 2005/202 (2013.01);
Abstract

An IR sensor device may include an IR image sensor having an array of IR sensing pixels, and a readout circuit coupled to the IR image sensor and configured to sense sequential images. The IR sensor device may include a controller coupled to the readout circuit and configured to cause the readout circuit to apply a voltage to the IR image sensor between sensing of the sequential images.

Find Patent Forward Citations

Chernyak, Leonid. (2021). Radiation-defect mitigation in inas/gasb strained-layer superlattice infrared detectors and related methods (U.S. Patent No. 11054312). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11054312

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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