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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11053126 B1

PDFFull Text
Date of Patent:
Jul. 06, 2021

Filed:

Oct. 26, 2018

Production of a porous product including post adapting a pore structure

Applicant:

Heraeus Quarzglas Gmbh & Co. KG, Hanau, DE;

Inventors:

Sascha Pihan, Aschaffenburg, DE;

Jörg Becker, Niddatal, DE;

Christian Neumann, Hungen, DE;

Assignee:

Heraeus Quarzglas GmbH & Co. KG, Hanau, DE;

Attorney:

Dicke, Billig & Czaja, PLLC

Primary Examiner:

Daniel C McCracken

Int. Cl.
CPC ...
C01B 32/342 (2017.01); C01B 33/18 (2006.01); H01M 4/96 (2006.01); C04B 38/00 (2006.01); C01B 32/05 (2017.01); C04B 35/16 (2006.01); C03B 1/00 (2006.01); C04B 35/52 (2006.01); B01J 20/20 (2006.01); B01J 20/30 (2006.01); B32B 18/00 (2006.01); H01M 4/66 (2006.01); H01M 4/80 (2006.01); H01M 4/86 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
C01B 32/342 (2017.08); B01J 20/20 (2013.01); B01J 20/3057 (2013.01); B32B 18/00 (2013.01); C01B 32/05 (2017.08); C01B 33/18 (2013.01); C03B 1/00 (2013.01); C04B 35/16 (2013.01); C04B 35/52 (2013.01); C04B 38/00 (2013.01); C04B 38/0029 (2013.01); H01M 4/663 (2013.01); H01M 4/80 (2013.01); H01M 4/8626 (2013.01); H01M 4/96 (2013.01); C01P 2006/10 (2013.01); C01P 2006/11 (2013.01); C01P 2006/12 (2013.01); C01P 2006/14 (2013.01); C01P 2006/17 (2013.01); C04B 2235/422 (2013.01); C04B 2235/483 (2013.01); C04B 2235/65 (2013.01); H01M 2004/021 (2013.01);
Abstract

One aspect is a production process including feeding a feed material composition into a reaction zone at a feeding position, wherein the feed material composition is liquid or gaseous or both; reacting the feed material composition in the reaction zone into a first plurality of particles by a chemical reaction; depositing the first plurality of particles onto a substrate surface of a substrate, thereby obtaining a porous silicon dioxide material, having a pore structure, in the form of up to 20 layers superimposing the substrate surface; at least partially removing the porous silicon dioxide material from the substrate surface; and modifying the pore structure of the porous silicon dioxide material, thereby obtaining the porous silicon dioxide material having a further pore structure.

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