The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Mar. 18, 2015
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Jea Gun Park, Seongnam-si, KR;
Du Yeong Lee, Seoul, KR;
Seung Eun Lee, Seoul, KR;
Min Su Jeon, Seongnam-si, KR;
Jong Ung Baek, Seongnam-si, KR;
Tae Hun Shim, Suwon-si, KR;
Abstract
A memory device contains lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode, which are formed on a substrate in a laminated manner. In the memory device, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.