The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

May. 23, 2017
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Hong Jae Yoo, Ansan-si, KR;

Hyo Shik Choi, Ansan-si, KR;

Hyung Ju Lee, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0075 (2013.01); H01L 33/145 (2013.01); H01L 33/325 (2013.01);
Abstract

A long-wavelength light emitting device is disclosed. The long-wavelength light emitting device comprises: a first conductive semi-conductor layer; an active layer that is located on the first conductive semi-conductor layer and that has a quantum well structure; and a second conductive semi-conductor layer that is located on the active layer. The active layer comprises: one or more well layers including a nitride-based semi-conductor having 21% or more In; two barrier layers located in upper and lower parts of the well layers, and located between the well layers and the barrier layers, wherein the upper capping layers have a bigger band-gap energy relative to the barrier layers, and the upper capping layers and the well layers are in contact.


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