The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Mar. 02, 2020
Fuji Electric Co., Ltd., Kawasaki, JP;
Tsuyoshi Araoka, Kohriyama, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A first portion of the poly-silicon layer is provided on a first face of a front surface of a semiconductor substrate via a gate insulating film in an edge termination region and configures a gate runner. The first portion opposes an edge p-type contact region in a depth direction Z. A chip-end-side edge of the first portion is positioned within a plane of the edge p-type contact region. A field oxide film disposed separated from the poly-silicon layer, extends from a chip end toward a chip center and, on the first face, terminates closer to the chip end than does the first portion. The entire surface of the poly-silicon layer is flat, free of a step due to the field oxide film. A chip-center-side edge of the field oxide film is closer to the chip end than is the edge p-type contact region and positioned on a p-type base region.