The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Oct. 12, 2020
Applicant:
Sunrise Memory Corporation, Fremont, CA (US);
Inventors:
Eli Harari, Saratoga, CA (US);
Tianhong Yan, Saratoga, CA (US);
Assignee:
SUNRISE MEMORY CORPORATION, Fremont, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/11582 (2017.01); H01L 29/06 (2006.01); G11C 16/04 (2006.01); H01L 27/11565 (2017.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); G11C 16/26 (2006.01); G11C 16/14 (2006.01); G11C 16/30 (2006.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 29/786 (2006.01); H01L 23/528 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53257 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 29/0649 (2013.01); H01L 29/1037 (2013.01); H01L 29/78642 (2013.01);
Abstract
A memory structure, includes active columns of polysilicon formed above a semiconductor substrate, each active column includes one or more vertical NOR strings, with each NOR string having thin-film storage transistors sharing a local source line and a local bit line, the local bit line is connected by one segment of a segmented global bit line to a sense amplifier provided in the semiconductor substrate.