The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Jul. 30, 2018
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Elizabeth Costner Stewart, Dallas, TX (US);
Jeffrey A. West, Dallas, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 49/02 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/823481 (2013.01); H01L 23/3171 (2013.01); H01L 28/10 (2013.01); H01L 28/40 (2013.01);
Abstract
An integrated circuit (IC) includes a substrate having functional circuitry for realizing at least one circuit function configured together with at least one high voltage isolation component including a top metal feature above the substrate. A crack suppressing dielectric structure including at least a crack resistant dielectric layer is on at least a top of the top metal feature. At least one dielectric passivation overcoat (PO) layer is on an outer portion of the top metal feature.