The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Aug. 12, 2020
Applicant:

Dosilicon Co., Ltd., Shanghai, CN;

Inventor:

Jun Keun Lee, Suwon-si, KR;

Assignee:

DOSILICON CO., LTD., Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 7/08 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 7/08 (2013.01); G11C 7/1048 (2013.01); G11C 7/1096 (2013.01); G11C 11/4091 (2013.01);
Abstract

Disclosed herein is a multi-bank type semiconductor memory device which reduces current consumption of data lines. In the multi-bank type semiconductor memory device according to the present invention, the data lines between each memory bank and an input/output buffer are divided into horizontal data lines and vertical data lines. In addition, a high impedance driver is provided to drive horizontal local data of the horizontal data line to provide the horizontal local data as vertical local data of the vertical data line. Therefore, in the multi-bank type semiconductor memory device according to the present invention, even when the horizontal local data and the vertical local data are controlled at a low power voltage, degradation in overall operating speed hardly occurs. In addition, in the multi-bank type semiconductor memory device according to the present invention, current consumption in the data lines is significantly reduced.


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