Flexible, low-latency error correction architecture for semiconductor memory products

Abstract

A novel architecture provides many of the advantages of the array and datapath architecture of DRAM products that do not utilize ECC (error correction code) functionality, while simultaneously allowing the flexible deployment of ECC error correction as needed. Aspects of the disclosure enable the minimization of write and read latency typically introduced by the implementation of ECC error correction. Sharing of circuit components between neighboring memory regions is also introduced, which allows for a reduction in circuit area as well as a reduction in loading on speed-critical data bus wiring, which improves overall performance. A very fast single error correct (SEC) and double error detect (DED) read-out for real-time system-level awareness is also provided.