The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Sep. 26, 2019
Applicant:
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Inventors:
Senlin Li, Tianjin, CN;
Jingfeng Bi, Tianjin, CN;
Chun-Kai Huang, Tianjin, CN;
Jin Wang, Tianjin, CN;
Chih-Hung Hsiao, Tianjin, CN;
Chun-I Wu, Tianjin, CN;
Du-Xiang Wang, Tianjin, CN;
Assignee:
XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/50 (2010.01); H01L 33/26 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/26 (2013.01);
Abstract
A light emitting diode includes an n-type confinement layer, a quantum well active layer formed on the n-type confinement layer, a p-type confinement layer formed on the quantum well active layer, a gallium phosphide-based quantum dot structure formed in the p-type confinement layer, and a GaP-based current spreading layer formed on the GaP-based quantum dot structure. A method of manufacturing the light emitting diode is also provided.