The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Jun. 11, 2019
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Mickael Gros-Jean, Grenoble, FR;
Julien Ferrand, Longechenal, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Croles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/07 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 27/0705 (2013.01); H01L 29/40111 (2019.08); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/6684 (2013.01);
Abstract
A ferroelectric field effect transistor includes a semiconductor substrate, with first and second source/drain regions being formed within the semiconductor substrate and being separated by a channel region. An interface layer is disposed on the channel region. A gate insulator layer is disposed on the interface layer. A ferroelectric layer is disposed on the gate insulator layer.
Gros-Jean, Mickael. (2021). Fefet transistor (U.S. Patent No. 11043591). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11043591
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile