The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Nov. 30, 2018
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Ralf Siemieniec, Villach, AT;

Wolfgang Bergner, Klagenfurt, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 29/15 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0852 (2013.01); H01L 29/1608 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01); H01L 21/049 (2013.01); H01L 21/0465 (2013.01); H01L 21/0485 (2013.01); H01L 21/0495 (2013.01);
Abstract

A semiconductor component includes gate structures extending into a silicon carbide body from a first surface. A width of the gate structures along a first horizontal direction parallel to the first surface is less than a vertical extent of the gate structures perpendicular to the first surface. Contact structures extend into the silicon carbide body from the first surface. The gate structures and the contact structures alternate along the first horizontal direction. Shielding regions in the silicon carbide body adjoin a bottom of the contact structures and are spaced apart from the gate structures along the first horizontal direction. Corresponding methods for producing the semiconductor component are also described.


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