The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Mar. 04, 2020
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;

Inventor:

Daiki Yoshikawa, Nonoichi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0626 (2013.01); H01L 29/0619 (2013.01); H01L 29/16 (2013.01); H01L 29/408 (2013.01); H01L 29/861 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor regions, a plurality of ring-shaped regions, and a semi-insulating layer. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region surrounds the second semiconductor region, and is provided on the first semiconductor region. The ring-shaped regions surround the second semiconductor region. The second electrode is provided on the second semiconductor region. The third electrode is provided on the third semiconductor region. The semi-insulating layer contacts the first semiconductor region, the second electrode, the ring-shaped regions, and the third electrode. The ring-shaped regions include first and second ring-shaped regions provided between the first ring-shaped region and the third semiconductor region. A length of the second ring-shaped region in a diametrical direction is shorter than a length of the first ring-shaped region in the diametrical direction.


Find Patent Forward Citations

Yoshikawa, Daiki. (2021). Semiconductor device (U.S. Patent No. 11043554). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11043554

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…