The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Dec. 17, 2014
Applicant:
Quantum Semiconductor Llc, San Jose, CA (US);
Inventor:
Carlos J. R. P. Augusto, San Jose, CA (US);
Assignee:
Quantum Semiconductor LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 27/146 (2006.01); H01L 33/34 (2010.01); H01L 33/00 (2010.01); H01L 27/144 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 33/06 (2010.01); H01L 31/02 (2006.01); H01L 31/107 (2006.01); H01L 27/142 (2014.01);
U.S. Cl.
CPC ...
H01L 27/15 (2013.01); H01L 27/1443 (2013.01); H01L 27/14603 (2013.01); H01L 27/14643 (2013.01); H01L 31/035236 (2013.01); H01L 31/18 (2013.01); H01L 33/0041 (2013.01); H01L 33/0054 (2013.01); H01L 33/06 (2013.01); H01L 33/34 (2013.01); H01L 27/142 (2013.01); H01L 31/02027 (2013.01); H01L 31/1075 (2013.01);
Abstract
Photonic devices monolithically integrated with CMOS are disclosed, including sub-100 nm CMOS, with active layers comprising acceleration regions, light emission and absorption layers, and optional energy filtering regions. Light emission or absorption is controlled by an applied voltage to deposited films on a pre-defined CMOS active area of a substrate, such as bulk Si, bulk Ge, Thick-Film SOI, Thin-Film SOI, Thin-Film GOI.