The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Jan. 15, 2020
Applicant:
Ablic Inc., Chiba, JP;
Inventors:
Hitomi Sakurai, Chiba, JP;
Masaru Akino, Chiba, JP;
Assignee:
ABLIC INC., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/28 (2006.01); G01R 31/26 (2020.01); H01L 29/78 (2006.01); G01R 31/18 (2006.01); H01L 29/94 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G01R 31/18 (2013.01); G01R 31/2621 (2013.01); H01L 21/28017 (2013.01); H01L 22/14 (2013.01); H01L 29/78 (2013.01); H01L 29/94 (2013.01); G01R 31/2831 (2013.01); H01L 21/28202 (2013.01); H01L 21/28211 (2013.01);
Abstract
In a manufacturing step in which a structure of target of screening is formed on a semiconductor substrate in the middle of manufacturing process before a semiconductor device is finished, screening of potential defects of a gate insulating film is performed for each wafer at one time so that the semiconductor device is caused to appear as an initial defective product when the finished semiconductor device is subjected to an electrical characteristic test. Provided are a semiconductor device, and a method of manufacturing a semiconductor device which enables reliable screening of potential defects in a short period of time.