The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Mar. 11, 2019
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Kotaro Murakami, Toyama, JP;

Naoharu Nakaiso, Toyama, JP;

Tetsuya Takahashi, Toyama, JP;

Atsushi Moriya, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); C23C 16/52 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C23C 16/4405 (2013.01); C23C 16/52 (2013.01); H01L 21/02167 (2013.01); H01L 21/32055 (2013.01); H01L 21/32135 (2013.01);
Abstract

There is provided a technique that includes partially etching a film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) setting a temperature of the substrate having the first film formed on the surface to a first temperature; (b) stabilizing an in-plane temperature of the substrate at the first temperature; and (c) lowering the temperature of the substrate having the in-plane temperature stabilized at the first temperature from the first temperature to a second temperature that is lower than the first temperature, wherein in (c), an etching gas is supplied to the substrate for a predetermined period.


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