The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Feb. 25, 2020
Applicant:

Headway Technologies, Inc., Milpitas, CA (US);

Inventors:

Koji Shimazawa, Cupertino, CA (US);

Shengyuan Wang, San Jose, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 13/08 (2006.01); G11B 5/00 (2006.01);
U.S. Cl.
CPC ...
G11B 13/08 (2013.01); G11B 2005/0021 (2013.01);
Abstract

A near field transducer (NFT) with an upper RhIr layer having an Ir content from 20-80 atomic % and a lower Au layer is formed between a waveguide and main pole at an air bearing surface (ABS). The RhIr layer has a rod-like front portion (peg) up to height h, and a substantially triangular shaped back portion (body) from hto height h. In some embodiments, there is a Rh underlayer with a thickness from 10 Angstroms to 200 Angstroms between the upper and lower NFT layers, and extending from the ABS to hso that the RhIr layer has a substantially uniform microcrystalline structure throughout to prevent thermally induced rupture defects proximate to h. Optionally, the Rh underlayer may have a front side at h, and may further comprise a lower Al or Zr adhesion layer. Accordingly, there is improved device reliability.


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