The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Sep. 04, 2018
Applicant:

Merck Patent Gmbh, Darmstadt, DE;

Inventors:

Huirong Yao, Plainsboro, NJ (US);

JoonYeon Cho, Bridgewater, NJ (US);

M. Dalil Rahman, Monmouth Junction, NJ (US);

Assignee:

Merck Patent GmbH, Darmstadt, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09D 7/61 (2018.01); G03F 7/11 (2006.01); C09D 185/00 (2006.01); G03F 7/16 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C09D 7/61 (2018.01); C09D 185/00 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01);
Abstract

The present invention relates to a composition comprising; components a. c. and d; and optional component b. wherein, component a. is a metal compound having the structure (I), optional component b., is a polyol additive, having structure (VI), component c. is a high performance polymer additive, and component d. is a solvent. The present invention further relates to using this compositions in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.


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