The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Jul. 18, 2018
Applicant:
Ams Ag, Premstaetten, AT;
Inventors:
Assignee:
AMS AG, Premstaetten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 45/30 (2020.01); H05B 45/32 (2020.01); H01L 25/16 (2006.01); H01L 31/02 (2006.01); H01L 31/0232 (2014.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H05B 45/32 (2020.01); H01L 25/167 (2013.01); H01L 31/02005 (2013.01); H01L 31/02327 (2013.01); H01L 33/0016 (2013.01); H01L 33/14 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01);
Abstract
The device comprises a bipolar transistor with emitter, base, collector, base-collector junction and base-emitter junction, a collector-to-base breakdown voltage, a quenching component electrically connected with the base or the collector, and a switching circuitry configured to apply a forward bias to the base-emitter junction. The bipolar transistor is configured for operation at a reverse collector-to-base voltage above the breakdown voltage.