The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Mar. 06, 2019
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Julien Morand, Rennes, FR;

Julio Cezar Brandelero, Rennes, FR;

Stefan Mollov, Rennes, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/042 (2006.01); H02M 1/08 (2006.01); H03K 17/16 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/04206 (2013.01); H02M 1/08 (2013.01); H03K 17/165 (2013.01); H02M 2001/0009 (2013.01); H02M 2001/0054 (2013.01);
Abstract

The present invention concerns a device and a method for controlling the switching from a conducting state to a non conducting state or from a non conducting state to a conducting state of a semiconductor power switch providing current to a load, the device receiving an input signal that is intended to drive the semiconductor power switch. The invention: —senses the derivative of the drain to source current going through the semiconductor power switch in order to obtain a voltage representative of the sensed derivative of drain to source current, —amplifies the voltage representative of the sensed derivative of drain to source current, —adds the amplified voltage representative of the derivative of the sensed drain to source current to the input signal during a given time period.


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