The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Oct. 25, 2016
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Takenori Watabe, Annaka, JP;

Shun Moriyama, Annaka, JP;

Hiroshi Hashigami, Annaka, JP;

Hiroyuki Ohtsuka, Karuizawa-machi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/05 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022458 (2013.01); H01L 31/0516 (2013.01); H01L 31/0682 (2013.01);
Abstract

A solar cell having, on a semiconductor substrate's first main surface a first conductivity type, a base layer having first conductivity type and an emitter layer which is adjacent to base layer and has a second conductivity type which is a conductivity type opposite to first conductivity type, the solar cell includes: a base electrode which is electrically connected with base layer; and an emitter electrode which is electrically connected with emitter layer, solar cell including: dielectric films which are in contact with base and emitter layer on first main surface; first insulator films which cover the emitter electrode, are placed on the dielectric films, and are arranged to have a gap at least on base layer; and a base bus bar electrode placed at least on first insulator films, and being wherein gap distance between the first insulator films is 40 μm or more and (W+110) μm or less.


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