The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Nov. 24, 2017
Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno, 's-Gravenhage, NL;
Maciej Krzyszto Stodolny, 's-Gravenhage, NL;
Lambert Johan Geerligs, 's-Gravenhage, NL;
Evert Eugène Bende, 's-Gravenhage, NL;
John Anker, 's-Gravenhage, NL;
Nederlandse Organisatie voor toegepast-natuurwetenschappeliik Onderzoek TNO, 's-Gravenhage, NL;
Abstract
A semiconductor substrate () having an active region () and a first surface and a second surface facing each other. A first type of passivating layer () is present for providing an electrical contact of a first conductivity type on a part of the first surface of the semiconductor substrate (). A dielectric layer () is provided between the first type of passivating layer () and an active region () of the semiconductor substrate (). Doping of the first conductivity type is provided in a layer () of the active region () of the semiconductor substrate () near the first surface. The lateral dopant level in the layer () of the active region () near the first surface is substantially uniform.