The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Jan. 29, 2019
Fujitsu Limited, Kawasaki, JP;
Toshihiro Ohki, Hadano, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes a back barrier layer formed over a substrate, a first electron transit layer formed over the back barrier layer, an opening formed in the first electron transit layer and the back barrier layer, a second electron transit layer formed over the first electron transit layer, a side surface of the first electron transit layer at a side surface within the opening, a side surface of the back barrier layer at a side surface within the opening, and a surface of the back barrier layer at a bottom surface within the opening, an electron supply layer formed over the second electron transit layer, a drain electrode formed over the electron supply layer within the opening, and a gate electrode formed to cover a side surface of the electron supply layer at a side surface within the opening from an edge part of the opening.